Semiconductor Surface and Interface States

Abstract

The investigation and understanding of the atomic structure and electronic properties of semiconductor surfaces and interfaces is a challenging area of current research. Because properties at surfaces are often drastically different from those in the bulk, many fundamental aspects of physics and chemistry are involved. Achieving a better understanding is also important for the related technology. In presenting the material in this chapter, we will continually stress the interdependence of the atomic structure and the electronic structure of surfaces. In almost all cases, the development of surface and interface states is accompanied by a self-consistent atomic rearrangement. Particular examples of this are the many spatial reconstructions that arise on clean semiconductor surfaces. The examples reviewed in this chapter are typical of some of the efforts to provide insight into the atomic and electronic structure of semiconductor surfaces and interfaces. As will be evident, considerable success in determining the atomic and electronic structure of semiconductor surfaces and interfaces has been achieved in the last decade. The application of synchrotron radiation–based techniques has played an important role in this achievement.