Abstract
In situ remote plasma processes consisting of removal of native oxide due to hydrogen (H2) plasma, surface modification due to phosphine (PH3) plasma and deposition of phosphorus nitride (PNx) films due to decomposition of PH3 by nitrogen (N2) plasma have been developed. The insulating PNx film with optical bandgap of 5.3 eV and electrical resistivity of 3.7× 1014 Ωcm is obtained by remote plasma chemical vapor deposition. Au/PNx/InP tunneling metal-insulator-semiconductor (MIS) type Schottky junction is formed by thein situ multiprocess. The effective barrier height is estimated to be as high as 0.83 eV. Enhancement of the effective barrier height is due to both effects of the MIS structure and unpinning of the surface Fermi level.
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