Abstract
In-situ remote plasma processes consisting of removal of native oxide due to hydrogen (H/sub 2/) plasma, surface modification due to phosphine (PH/sub 3/) plasma and deposition of PN/sub x/ films due to decomposition of PH/sub 3/ by nitrogen (N/sub 2/) plasma have been developed. The insulating PN/sub x/ film with an optical bandgap of 5.3 eV is obtained by remote plasma CVD. Au/PN/sub x//InP tunneling metal-insulator-semiconductor (MIS) type Schottky junction is formed by the in-situ multi-processes. The effective barrier height is estimated to be as high as 0.83 eV. Enhancement of the effective barrier height is due to both effects of the MIS structure and unpinning of the surface Fermi level.
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