Abstract

Au/PN/sub x//InP tunnel metal-insulator-semiconductor (MIS) Schottky junctions have been formed by using in-situ remote plasma process consisting of removal of native oxide due to H/sub 2/ plasma, surface modification due to PH/sub 3/ plasma and deposition of PN/sub x/ films due to decomposition of PH/sub 3/ by N/sub 2/ plasma. Both effective and true barrier heights are estimated to be 0.83 and 0.57 eV, respectively. Neither barrier height nor ideality factor is varied even after annealing at 250/spl deg/C. The forward current drift is significantly suppressed by annealing.

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