Abstract
Direct bonding of an n-GaAs thin film onto the surface of epitaxial p-diamond has been attempted. Prior to bonding, the diamond and GaAs surfaces were analyzed by X-ray photoelectron spectroscopy. A rectifying characteristic was obtained for the p-diamond/n-GaAs bonded junction system. Moreover, the occurrence of a photovoltaic effect at the junction was observed under illumination with a AlGaAs laser operated at 789 nm. Thus a Diamond-GaAs pn junction can be formed by direct bonding.
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