Abstract
The heavy ion beam of Boron and Phosphorus are implanted to Silicon substrate and the pn junctions are formed. The depth of the pn junctions are measured and are compared with the calculated results which are derived from the universal range energy relation due to Lindhard theory. The results fairly good agreement. The technique is applied to produce the mesa type diode, and the characteristics of the diode are fairly good. The channeling, the sputtering, and the damage which are produced by the ion implantation to the Silicon substrate are also discussed.
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