Abstract
Continuous NdSi2 phase layers could be obtained by high-current Nd-ion implantation into Si using a metal vapor vacuum arc ion source and the formation temperature could be relatively low in the range from 165 to 320°C. Furthermore, the surface morphology of the Nd-ion implanted surface varied with the implantation parameters. The formation mechanism of the NdSi2 phase as well as its continuous layer is also discussed in terms of the temperature rise caused by ion beam heating and variations of the ion dose in the Nd-ion implantation process.
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