Formation of MnAs and MnP layers by reactive laser sputtering

Abstract

We show that the technique of pulsed laser sputtering of metallic manganese in a flow of hydrides (arsine or phosphine) allows the deposition of half-metallic MnB5 compound layers on GaAs (100) substrates. The crystal structure, magneto-optical, and galvanomagnetic properties of the layers are determined by synthesis conditions, mainly by substrate temperature. It is established that the MnAs and MnP layers are ferromagnetic at temperatures up to 300 K.