Electrical, photoelectrical properties and crystal structure of A 2B 6 films, grown by laser sputtering

Abstract

The new static vacuum system with laser-getter evacuation is proposed. The Cr x Hg 1− x Se ( x = 0.1; 0.2) and Cd x Hg 1− x Se ( x = 0.25; 0.6) thin films are prepared by pulsed laser sputtering in static vacuum and their structural properties are studied as a function of substrate temperature. It is shown that at substrate temperature 360 K the obtained films are polycrystalline, and at 380–390 K they are textured, offering mobilities ∼10 4 cm 2/V·s for Cr x Hg 1− x Se and ∼10 3 cm 2/V·s for Cd x Hg 1− x Se. For the Cr x Hg 1− x Se films on the temperature dependence in the region of 200 K an increase in the Hall coefficient is observed which is attributable to a change in Cr charge state. Laser recrystallization method was also used to obtain CdTe and Cd 0.8Mn 0.2Te based barrier structures in static vacuum, exhibiting rectifying properties with rectifying factor k = 10 4 and 30, respectively.