Abstract
InAs are grown on vicinal GaAs (110) surfaces with giant steps using molecular beam epitaxy. Atomic force microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy show that uniform and well-aligned InAs wires and dots are formed on the facets at giant step edges due to the accumulation of InAs. This accumulation is only observed in a relatively high growth temperature range (580–600° C) and not at low temperatures.
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