Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures

Abstract

(111) synthetic HPTP diamond plates are irradiated by H2+ 50 keV ions in the range of the fluences of 1−13 × 1016 sm−2 and annealed in vacuum at 1 mPa (VPHT, 500–1600°C) or at high HPHT parameters (4.0–7.5 GPa, 1200–1550°C). It is shown by measuring the layer conductivity and Raman light scattering that after VPHT annealing, a buried layer of glassy carbon 10–100 nm thick with low resistance (∼1 kOhm/□) is formed, followed by HPHT with high resistance (∼1 MOhm/□) and hopping transport along defects.