Abstract
AbstractStructural defects produced in single crystal silicon after hydrogen ion implantation were studied by electron paramagnetic resonance spectroscopy. Samples implanted at 77K show the presence of vacancy clusters that serve as precursors for nanoblister formation upon subsequent thermal treatment. Evolution of vacancy clusters at various stages of thermal annealing show the influence of implanted hydrogen redistribution that passivates the paramagnetic activity in the intermediate temparature range. At still higher temperatures hydrogen outdifluses from the bulk activating remaining structural defects. At these temperatures, formed vacancy clusters gettered oxygen present in the bulk forming, therefore, VxOy complexes. Finally, at temperatures above 700°C vacancy clusters disintegrate completely.
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