Hydrogen-ion implantation in GaAs

Abstract

The results of the basic study on depth distribution of hydrogen atoms and corresponding damage profiles produced by 50keV H-ion implantation in (100) GaAs are reported. The influence of the H-ion dose and of the temperature of implantation and subsequent annealing were studied. The depth distribution of hydrogen was measured using the 15N(p,αγ)12C nuclear reaction, whereas the RBS/channeling was applied for defect analysis. Two temperature regions revealed: at temperatures below 90°C independently of the hydrogen dose no blisters were found, whereas, at temperatures above 120°C blisters appear at doses exceeding the critical value. In the latter region hydrogen-defect complex formation was observed which are effective hydrogen traps and stabilize the radiation damage. With the increasing H-ion dose these complexes agglomerate into hydrogen gas bubbles. The increase of gas pressure in such bubbles upon subsequent thermal treatment can result in the splitting of a surface layer from the substrate.