Abstract
We have investigated non-hydride metalorganic chemical vapor deposition (MOCVD) for the growth of self-assembled InP islands on InGaP surfaces lattice-matched to 0° and 2° misoriented GaAs(001) substrates. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) have been used to investigate the self-assembling nature of quantum-size InP islands on InGaP/GaAs(001) surfaces. From the structural analysis of the surface by AFM, we have observed three types of InP island evolve during the growth process. At low coverages of InP deposited at 650°C on a (001) surface, coherently strained islands with irregular dimensions in the plane of the growth surface but of uniform height (2.5 nm), are observed. With increasing InP deposition of uniform coherently strained islands are observed with a typical diameter of 120 nm with a dramatic increase in height (23.5 nm).
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