InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

C.M Reaves,S Varma,S.P Denbaars,V Bressler-Hill,M Krishnamurthy,P.M Petroff,W.H Weinberg

doi:10.1109/iciprm.1994.328306

InP islands on GaAs substrates: MOCVD growth of quantum-sized structures

C.M Reaves, S Varma + Show 5 more

https://doi.org/10.1109/iciprm.1994.328306

Copy DOI

Publication Date: Mar 27, 1994

Affiliation: University of California, Berkeley, University of California, Santa Barbara, Arizona State University

#Metalorganic Chemical Vapor Deposition #InP Islands + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

The growth of InP on InGaP/GaAs(001) by metalorganic chemical vapor deposition (MOCVD) has been studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL). Islands with irregular dimensions on the growth surface but with uniform height are observed at low coverages. With increasing coverages, uniform coherent islands are observed with a dramatic increase in height. An appreciable density of large dislocated islands become evident at still higher coverages. Photoluminescence from these structures is discussed. >

Full Text