Abstract
Formation of C54 TiSi 2 was investigated in cosputtered (Ti+Si) films with and without a TiN capping layer following rapid thermal annealing (RTA). The first phase observed in the specimens was Ti 5Si 3 regardless if a TiN overlayer was present. Free energy calculations indicate the preference of Ti 5Si 3 formation as the first phase. C54 TiSi 2 started to form at lower temperatures in the specimens capped with TiN. Its formation also occurred at shorter annealing times at some given temperature. The influence of a TiN capping layer on enhancing C54 TiSi 2 formation is attributed to the stress induced by this layer into the (Ti+Si) film. The X-ray diffraction (XRD) method was used to evaluate the stress in the TiN film. Free energy values also indicate that C54 TiSi 2 formation is favored in capped samples.
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