Abstract
A thin layer of Ta is introduced between Ti films and Si substrates in order to promote the formation of C54 TiSi 2. After rapid thermal annealing (RTA) at 580°C, the single C40 TiSi 2 phase is first found in the sample with a Ta interlayer, and compared with others’ work, the crystalline quality of C40 TiSi 2 is highly improved. The C54 TiSi 2 phase is formed directly bypassing C49 TiSi 2 when the samples are annealed at 650°C. The formation temperature of C54 TiSi 2 is lowered by 100°C because of the formation of the pure C40 TiSi 2 films.
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