Abstract
Buried implanted oxide layers have been formed by high dose implantation of oxygen ions of the order of 1 × l018−2 in silicon. The effects of dose at a given energy, and energy for a given peak concentration, on the distribution profile of oxygen have been studied. An approximately Gaussian distribution is observed at doses contributing less than the stoichiometric requirement of oxygen for the formation of silicon dioxide. A saturation in the oxygen peak concentration is reached when the stoichiometric requirement is exceeded.
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