Abstract
An experimental system has been developed, capable of producing buried oxide layers by high dose oxygen ion implantation. A Whickham Engineering implanter has been used with hybrid beam scanning and infra-red pyrometry to produce buried oxide layers. A new spinning disc target chamber, which can handle large wafer batches is described. Nuclear reaction analysis has been used to assess the dose and uniformity of the oxide layers. The technique has been shown to be capable of accurately measuring the oxygen content of films by comparison with ellipsometric measurements.
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