Abstract
We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi3.35La0.75Ti3O12 (BLT) ferroelectric films and lanthanum aluminate (LaAlO3) buffer layers on Si(100) substrates. LaAlO3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situ N2 annealing in a rapid thermal annealing (RTA) furnace at 800°C for 1 min. On the optimized LaAlO3/Si structure, a Bi3.35La0.75Ti3O12 film with 220-nm-thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO3/Si diode was about 4.0 V for a voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 8 hours.
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