Abstract
We formed MFIS (metal-ferroelectric-insulator-semiconductor) diodes by depositing Bi3.35La0.75Ti3O12 ferroelectric films and LaAlO3 buffer layers on Si(100) substrates. LaAlO3 films were prepared by an MBD (molecular beam deposition) method, and they were subjected to ex situN2 annealing in RTA (rapid thermal annealing) furnace at 800°C for 1 min. On the optimized LaAlO3/Si structure, a BLT film with 480 nm in thickness was deposited by a sol-gel technique. The memory window width in C-V (capacitance-voltage) curve of the Pt/BLT/LaAlO3/Si diode was about 4.5 V for voltage sweep of ±10 V. It was also found that the retention time of this diode was longer than 5 days.
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