Formation of Al 3Hf by Hf ion implantation into aluminum using a metal vapor vacuum arc ion source

Abstract

The high aluminum content intermetallic compounds DO 23–Al 3Hf and L1 2–Al 3Hf were directly formed by Hf ion implantation into Al matrix with an average current density of 64 μA/cm 2 using a metal vapor vacuum arc (MEVVA) ion source at a dose from 3×10 17 to 7×10 17 ions/cm 2. With increasing ion dose, the content of the DO 23–Al 3Hf and L1 2–Al 3Hf phases increased. At a dose of 7×10 17 ions/cm 2, the Hf-aluminides layer was approximately 500 nm thick. The surface layer hardness of the sample implanted by Hf ions at a dose of 7×10 17 ions/cm 2 was approximately three times larger than that of the aluminum without any Hf ion implantation.