Abstract
The possibility of scaling of recently developed memristors of a new type based on (Co40Fe40B20)x(LiNbO3)100 –x is shown. The scaling is carried out by formation of the array of elements with a surface area of 50 × 50 µm2. It is shown that the spread of resistances in the high (off-state; Roff) and low resistance states (on-state; Ron) when resistive switching (RS) does not exceed 25% and individual elements show endurance exceeding 2 × 105 times when Roff/Ron > 10. For the first time within the region of resistive switching, the possibility of quasi-continuous change of the resistive state of structures by stepwise change with an accuracy no less than 0.2% (256 steps in the range 0.5–3 MΩ) was demonstrated.
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