Abstract
The formation mechanism of metal oxide films is very important to nanomanufacturing and microelectronic devices. We have prepared the aluminum oxide (Al2O3) films with the thicknesses ranging from 1 to 30 nm by using atomic layer deposition technology. By investigating their morphologies and optoelectrical properties, we found that the Al2O3 films grow on substrate via a layer growth mode by atomic force microscope measurement. Grazing incidence small-angle x-ray scattering further proved that a layer structure parallel to the substrate at the thickness of 5 nm. The water contact angle revealed that 5 nm is critical thickness of physical-film formation. The analysis of dielectric characteristics and the performance of thin film transistors revealed that 30 nm is critical thickness of dielectric-film formation. The understanding on structure–function relationships is necessary to realize the potential application of metal oxide films.
Published Version
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