Abstract
In crystalline silicon, atomic hydrogen released from hydrogen dimers forms acceptor–hydrogen pairs during annealing in the dark at elevated temperatures. In this study, the formation of boron–hydrogen (BH) and gallium–hydrogen (GaH) pairs in 1 Ω cm silicon is investigated at temperatures ranging from 140 to 220 °C. Acceptor–hydrogen concentrations in the low range are quantified by means of highly sensitive resistance measurements. GaH pairs are generally found to form faster than BH pairs. Arrhenius analysis shows a difference in activation energy (BH: 1.20 eV, GaH: 1.04 eV) while the trial frequency is the same ().
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