Abstract
We observed the annihilation of boron–hydrogen (BH) pairs and gallium–hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.
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