Abstract
We observed the enhanced formation of boron-hydrogen (BH) pairs during electron irradiation of Si crystals co-doped with boron and hydrogen. Such formation was not observed in case of GaH pairs. These results indicate that the BH formation during electron irradiation is due to enhancement of B motion but not hydrogen motion. The optical absorption spectrum of BH pairs observed in the above experiment was the same as that formed by annealing of similar specimens, in which B occupies a substitutional site, B(s). Hence, the observed spectrum is due to B(s)H pairs in both experiments, even though the above B motion occurs due to motion of interstitial B.
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