Abstract
Thin Mg2Ge films were grown using two methods: a co-deposition of Ge and Mg on Si substrate kept at room temperature followed by annealing at 200 °C (solid phase epitaxy – SPE) and reactive deposition epitaxy (RDE) of Ge and Mg on Si at 200 °C. Optical properties of these structures were investigated in the photon energy range of 0.02–6.2 eV. Based on optical functions calculation, it was shown that SPE growth results in formation of a crystalline layer of Mg2Si, which exhibits a strong optical phonon originated from the substrate-film interface. In the case of RDE growth, the amount of Mg2Si is sufficiently lower, but Mg‑Si-Ge compound phonon appears. The estimate of a fundamental indirect transition value in the film is 0.72 eV for SPE growth method and 0.56 eV for RDE due to the ternary compound Mg-Ge-Si at the film-substrate interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.