Abstract
We study the growth and optical properties of Cr-doped CdTe/ZnTe nanostructures grown on ZnTe (001) substrates by molecular beam epitaxy. In-situ reflection high-energy electron diffraction is used to study the growth processes and strain relaxation behaviors of Cr-doped CdTe quantum dots (QDs). After 4.5�ML deposition, the surface lattice parameter begins to increase remarkably, which indicates that the two-dimensional growth mode is terminated and the CdTe layer grows in a three-dimensional mode. Low temperature photoluminescence spectra of Cr-doped CdTe QDs (Tcr = 900 °C) show a broad emision. With increasing the Cr cell temperature above 1000 °C, the luminescence from CdTe QDs disappears and the broad luminescence at around 1.6 eV becomes dominant.
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