Abstract
Zn1-xMgxTe layers with a wide composition range of 0≥x≥0.66 were grown on ZnTe (001) substrates by molecular beam epitaxy. Zn1-xMgxTe epitaxial layers with Mg composition below 0.66 have a zincblende structure, suitable for fabrication of LED. Strained pseudomorphic epitaxial layer is obtained at the Mg composition x up to 0.05. Mg composition in epitaxial layer was controlled by the flux ratio of Mg/(Zn+Mg), but it was also affected by the flux ratio of Te/(Zn+Mg).
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