Abstract
Thermal atomic layer etching (ALE) of nickel (Ni) may be performed with a step of thin-layer oxidation of its surface and another step of its removal by gas-phase hexafluoroacetylacetone (hfacH) as an etchant. In this study, adsorption of hfacH and possible formation of volatile nickel hexafluoroacetylacetonate Ni(hfac)2 on a NiO surface were investigated based on the density functional theory (DFT) with more realistic surface material models than those used in the previous study [A. H. Basher et al., J. Vac. Sci. Technol. A 38, 022610 (2020)]. It has been confirmed that an hfacH molecule approaching a NiO surface deprotonates without a potential barrier and adsorbs on the surface exothermically. In addition, stable adsorption of two deprotonated hfacH molecules on a NiO (100) surface was found to occur not on a single Ni atom but over a few Ni atoms instead, which makes the formation of a Ni(hfac)2 complex on the flat surface very unlikely even at elevated temperature. However, if the surface is rough and a Ni atom protrudes from the surrounding atoms, two hexafluoroacetylacetonate anions (hfac−) can bond to the Ni atom stably, which suggests a possibility of desorption of a Ni(hfac)2 complex from the surface at elevated temperature. Given the experimentally observed fact that desorption of Ni(hfac)2 complexes typically takes place on a NiO surface at a temperature of ∼300–400 °C, our DFT calculations indicate that the surface roughness of an oxidized Ni surface facilitates the formation and desorption of organometallic complexes Ni(hfac)2, and therefore, the resulting Ni surface after ALE can be smoother than the initial surface.
Highlights
Adsorption of hfacH and possible formation of volatile nickel hexafluoroacetylacetonate Ni(hfac)[2] on a nickel oxide (NiO) surface were investigated based on the density functional theory (DFT) with more realistic surface material models than those used in the previous study [A
The reaction energy obtained here is in reasonable agreement with what was reported in the earlier study.1Second, we examined the formation process of volatile organometallic complex Ni(hfac)[2] on a NiO surface
The adsorption mechanism and adsorption energy of an hfacH molecule on a NiO (100) surface obtained in this study are consistent with what was reported in the earlier study.[1]
Summary
ALE processes may be divided into two categories: plasma-assisted ALE4,9,10,19,20 and thermal ALE.[10,18,20–22] In a avs.scitation.org/journal/jva typical plasma-assisted ALE, a modified surface layer is removed by the impact of low-energy plasma-generated ions incident upon the surface. The kinetic energy of the incident ions is set sufficiently low so that the etching process automatically stops once the chemically modified surface layer is completely removed. The major advantages of plasma-assisted ALE are that etching can be performed at low surface temperature, and anisotropic etching can be achieved owing to the directionality of incident ion motion. A possible disadvantage of plasma-assisted ALE is that ion bombardment may cause atomic-scale surface damages even at low ion incident energy.[2,3,4,9,10]
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More From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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