Abstract
Carbon implantation into silicon substrates at 65 keV at doses of 3 × 1017 to 8 × 1017 cm−2 with a metal vapor vacuum arc ion source has been performed to form SiC-Si heterojunction structures. From X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy results, it is found that crystallization into the cubic SiC phase occurs during the carbon implantation when the dose is sufficiently high. The electron spin resonance (ESR) spectra of these implanted samples was observed to have a well definedg value of 2.0038 and a peak-to-peak line width of about 6.0 gauss. This ESR signal is attributed to Si dangling bonds bonded to carbon neighbors. The electrical measurements show that all the implanted SiC-Si heterojunctions exhibit rectifying behaviors.
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