Abstract
The flux method of treating the one-dimensional steady-state transport problem of excess charge carriers, created by the generating sources, is analysed for multilayer devices in the presence of electric field. General analytical expressions for the forward (parallel to the electric field) and backward (antiparallel to the electric field) fluxes of excess carriers at any arbitrary boundary of the multilayer device are derived in terms of the reflection and transmission coefficients of the individual layers and boundaries. As an application of this general analysis, a simple example of a multilayer device consisting of only two layers is considered. The results are shown to reduce those obtained by other calculations in appropriate limiting cases.
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