Abstract
Fluorine mediated crystal silicon thin films in plasma‐enhanced chemical vapor deposition were grown using a Si2H6 and SiF4 gas mixture without an intentional hydrogen dilution. The crystal growth took place at the temperatures above 400°C, and both crystallinity and growth rate were increased with an addition of SiF4. Optical emission spectroscopy reveals that addition of SiF4 changes the major precursor from SiH3 to SiHnFm (n+m≤3), and provides an abundant atomic fluorine ambient. These results indicate that contribution of atomic hydrogen is not indispensable for the crystallization, and atomic fluorine can be an alternative to atomic hydrogen.
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