Abstract
Top gate pentacene thin film transistor operating at low voltage was established on flexible poly(ethylene terephthalate) substrate by multilayer transfer fabrication. Source and drain electrodes were embedded in a flexible substrate. Thin polymer film and metal oxide layer prepared from metal electrode by oxygen plasma treatment were used as dielectrics. Top gate organic thin film transistor was achieved by transferring pentacene/poly(vinyl phenol)/Al2O3∕Al layers onto flexible electrodes embedded substrate. Simple approaches for fabricating low voltage operating device were developed and these approaches could pave the simple way to realize flexible devices.
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