Abstract
To realize a flexible large-size e-paper, there are key technological issues of flexible process such as transferring method and thermal stability of the substrate and the device. Thus, new transferring method using a thick stainless steel substrates (STS430) prepared with multi-barrier layers has been developed along with back side etch technique in order to use current LCD infrastructure. Also, relatively high temperature process of 250 °C to achieve reliable amorphous silicon thin-film transistor backplanes has been developed. Then, we have successfully demonstrated A3-size flexible e-paper display with integrated gate driver-circuits using thin-film transistors on the flexible panel, and suggest the tiling method for implementing 40 inch and above size e-paper displays.
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