Abstract
AbstractIn this article, we described an innovative design technology of active matrix organic light emitting diode (AMOLED) display, to provide a bezel free design. We designed gate driver circuit of amorphous indium‐gallium‐zinc oxide thin‐film transistors (TFTs) not on the bezel area but within the active array. Although we applied challengeable design, no degradation of electrical/optical properties of panel was observed. Because we effectively prevented capacitive coupling and interference between the emission circuit and integrated gate driver circuit in active array, finally, we successfully demonstrated a bezel free designed AMOLED display of 18.3″ HD (1366 × 768) driven by a‐InGaZnO TFTs.
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