Flexible resistive switching device based on the TiO2 nanorod arrays for non-volatile memory application

Abstract

In this article, a flexible resistive switching memory is developed based on TiO2 nanorod arrays with interstice between the nanorods to release the bending stress/strain. The device shows a stable forming-free bipolar resistive switching behavior with low operating voltage of below 3 V, high ON/OFF ratio of above 102, good retention for more than 105 s, good endurance of 107 cycles, and good thermal stability of the high resistance and low resistance state at 85 °C during the retention and fatigue tests. Moreover, under the different bending radius from 12 mm to 5 mm, the electrical performances referring to operating voltage and ON/OFF ratio of the device show few changes, and under the bending cycles of 400 times with the bending radius of 12 mm, all of the devices show no interfacial crack or delamination as well as keep the bipolar resistive switching behavior with the low operating voltage and high ON/OFF ratio. The good performances of the devices suggest that the TiO2 nanorod arrays resistive switching device may open up new possibilities in realizing high-performance flexible memory.