Abstract
Recently, resistive switching devices are getting tremendous attention since they can be used for data storage in future. In this paper, we propose a non-volatile resistive switching device based on inorganic and organic nano-composite of zirconium dioxide (ZrO2) and poly (4-vinylphenol) (PVP), respectively. The nano-composite active layer ZrO2:PVP is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate through a spin coater technology and the top electrodes are fabricated by using silver (Ag) epoxy. The proposed device demonstrates a bipolar resistive switching at low operating voltage of ± 1.5 V with high resistance state and low resistance state of 11.438 kΩ and 262.25 Ω, respectively. To verify the non-volatility and long-term stability, the retention time is checked for more than 30 days and Roff/Ron resistance ratio is ~ 44. The proposed device is analyzed electrically and mechanically to analyze the effect of PVP in ZrO2 for better memory application and FESEM is used for the morphological characteristics of the device. These results ensure that the ZrO2:PVP nano-composite-based resistive switching device can be a possible candidate for the forthcoming flexible and low-power non-volatile resistive switching memory device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
