Abstract
The flexible organic ferroelectric nonvolatile memory thin film transistors (OFMTs) were fabricated on polydimethylsiloxane (PDMS) elastomer substrates, in which an organic ferroelectric poly(vinylidene-trifluoroethylene) and an organic semiconducting poly(9,9-dioctylfluorene-co-bithiophene) layers were used as gate insulator and active channel, respectively. The carrier mobility, on/off ratio, and subthreshold swing of the OFMTs fabricated on PDMS showed 5×10−2cm2V−1s−1, 7.5×103, and 2.5V/decade, respectively. These obtained values did not markedly change when the substrate was bent with a radius of curvature of 0.6cm. The memory on/off ratio was initially obtained to be 1.5×103 and maintained to be 20 even after a lapse of 2000s. The fabricated OFMTs exhibited sufficiently encouraging device characteristics even on the PDMS elastomer to realize mechanically stretchable nonvolatile memory devices.
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