Abstract
High-performance nickel (Ni)-doped zinc oxide thin-film transistors (NZO TFTs) have been successfully fabricated on transparent flexible plastic substrates at a low temperature. The effect of different oxygen partial pressures during channel deposition on the electrical properties of NZO TFTs was studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant influence on the performance of NZO TFTs. Finally, it was demonstrated that a NZO film with 100% Ar sputtering gas during channel deposition exhibited the best electrical properties, with a drain current on/off ratio of 108, a positive threshold voltage of 2.59 V, a subthreshold swing of 233 mV/decade, and a saturation mobility of 118.9 cm2·V−1·s−1. The results show that Ni-doped ZnO is a promising candidate for flexible fully transparent displays.
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