Abstract
Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) filmsand n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates.The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in paralleland two HgSe-n-channel TFTs in series. The NOR gate was built up with both twoHgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility andon/off ratio for the p-channel TFTs were estimated to be0.9 cm2 V − 1 s − 1 and 10, respectively, and those for the n-channel TFTs were measured to be1.8 cm2 V − 1 s − 1 and102, respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 andtransition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, theoperations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.
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