Abstract
To realize the temperature-stable threshold-current and lasing-wavelength 1.3–1.5 μm laser diodes, TlInGaAsN/AlGaAs heterostructures were proposed. As a first step, TlInGaAs was successfully grown, for the first time, on GaAs substrate by molecular beam epitaxy. The incorporation of Tl was confirmed with reflection high-energy electron diffraction intensity oscillation measurement. Photoluminescence (PL) measurements were conducted on the TlInGaAs/GaAs and InGaAs/GaAs heterostructure samples and the red shift of the PL peak energy was observed for the TlInGaAs/GaAs samples, as expected.
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