Abstract
New alloy semiconductor TlInGaAsN/AlGaAs heterostructures for fabricating 1.3–1.55 µm wavelength laser diodes with temperature-stable threshold current and temperature-stable lasing wavelength are proposed. TlInGaAs/GaAs and InGaAs/GaAs double-hetero (DH)-, multi-hetero (MD)- and single-quantum-well (SQW) structures were grown on GaAs substrates by gas source molecular beam epitaxy. Incorporation of Tl into TlInGaAs was confirmed up to 9% with reflection high-energy electron diffraction intensity oscillation. Red shift of the photoluminescence peak energy was also observed for TlInGaAs/GaAs DH, MH and SQW samples, which agrees with the incorporation of Tl.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
