Abstract
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) were grown by metalorganic chemical vapor deposition on a sapphire substrate with (112̄0) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (11̄02) orientation (R-face). The structure of the LDs was an InGaN MQW/GaN/AlGaN separate confinement heterostructure (SCH). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed strong stimulated emission at a wavelength of 415.3 nm under pulsed current injection above 360 mA at room temperature. The laser threshold current density was 6 kA/cm2. As a maximum characteristic temperature of the threshold current, T0 = 313 K was obtained for the InGaN MQW/GaN/AlGaN SCH LDs.
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