Abstract
InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III–V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrate with (11*BAR*2*BAR*0) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (1*BAR*1*BAR*02) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed a sharp peak of light output at 415.6 nm that had a full width at half-maximum of 0.05 nm under pulsed current injection of 1.17 A at room temperature. The laser threshold current density was 9.6 kA/cm2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
