Abstract
Stripe- and ridge-geometry in InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) were fabricated on sapphire substrates with (112̄0) orientation (A face). The ridge-geometry InGaN MQW LDs showed strong stimulated emission at a wavelength of 411.3 nm under a pulsed current injection of 199 mA at room temperature. The differential quantum efficiency per facet and the threshold current of ridge-geometry LDs were 30% and 180 mA, respectively. The laser threshold current density was 3 kA/cm2. These values were greatly improved in comparison to those of stripe-geometry LDs. The characteristic temperature of the threshold current was around 185 K.
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