Abstract
A super-junction (SJ) device has been developed to improve the trade-off relationship between the breakdown voltage (V BD ) and specific on-resistance in unipolar devices. Si-SJ devices are now widely used, and the effect of the SJ structure is also expected in SiC devices. Fundamental processes for fabricating SJ structures by using a multi-epitaxial (ME) growth method have been developed, where the epitaxial growth and MeV-class implantation steps are alternately repeated. Two types of test elemental groups (TEGs) were formed on the same wafer for evaluation of V BD and the specific resistivity of the drift layer (R drift ). The measured V BD was 1545 V, which was higher than that of the SiC theoretical limit by 670 V, and a value of R drift (including the substrate resistance) of 1.06 mΩ·cm 2 was obtained.
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