Abstract

This paper presents the first functional SiC super junction devices, SiC SJ Schottky diodes, which substantially improve the trade-off between the breakdown voltage and specific on-resistance in SiC power devices. Processes for fabricating SJ structures by using a trench-etching-and-sidewall-implant method has been developed and a functional SJ Schottky diode has been demonstrated based on this processing method. The measured cell blocking voltage was 1350V, which achieves 95% of the simulated blocking voltage for the ideally-charge-balanced SJ structure. The measured device specific on-resistance was 0.92mΩ·cm2. The SJ drift region specific on-resistance as low as 0.32 mΩ·cm2 was obtained after subtracting the substrate resistance.

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