Abstract
Magnetic transition studies have been made by measuring the electrical resistivity of thin Gd films as a function of temperature. The shift of the Curie temperature, Tc, with film thickness, d, can be characterized by a critical exponent, λ, such that [Tc(∞) − Tc(d)]Tc(∞) ∼ bdλ. The value of the shift exponent λ was found to be 0.91 ± 0.02. The effect on Tc of annealing the Gd films has also been examined. The values of Tc obtained from electrical resistivity measurements are independent of annealing temperatures up to 573 K for 30 minutes.
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